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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MPS4123/D
Amplifier Transistors
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER
MPS4123 MPS4124
1 2 3
MAXIMUM RATINGS
Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current -- Continuous Total Power Dissipation @ TA = 25C Derate above 25C Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCE VCB VEB IC PD PD TJ, Tstg MPS4123 30 40 5.0 200 625 5.0 1.5 12 - 55 to +150 MPS4124 25 30 Unit Vdc Vdc Vdc mAdc mW mW/C W mW/C C
CASE 29-04, STYLE 1 TO-92 (TO-226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol Rq JA Rq JC Max 200 83.3 Unit C/W C/W
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0) Collector - Base Breakdown Voltage (IC = 10 m A, IE = 0) Emitter - Base Breakdown Voltage (IC = 0, IE = 10 m A) Collector Cutoff Current (VCB = 20 V, IE = 0) Emitter Cutoff Current (VEB = 3.0 V, IC = 0) MPS4123 MPS4124 MPS4123 MPS4124 V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 30 25 40 30 5.0 -- -- -- -- -- -- -- 50 50 Vdc Vdc Vdc nAdc nAdc
REV 1
Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1996
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MPS4123 MPS4124
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 2.0 mA, VCE = 1.0 V) (IC = 50 mA, VCE = 1.0 V) Collector - Emitter Saturation Voltage (IC = 50 mA, IB = 5.0 mA) Base - Emitter Saturation Voltage (IC = 50 mA, IB = 5.0 mA) hFE MPS4123 MPS4124 MPS4123 MPS4124 VCE(sat) VBE(sat) 50 120 25 60 -- -- 150 360 -- -- 0.3 0.95 Vdc Vdc --
SMALL- SIGNAL CHARACTERISTICS
Current - Gain -- Bandwidth Product (IC = 10 mA, VCE = 20 V, f = 100 MHz) Output Capacitance (VCB = 5.0 V, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz) Small-Signal Current Gain (IC = 2.0 mA, VCE = 1.0 V, f = 1.0 kHz) Noise Figure (IC = 100 m A, VCE = 5.0 V, RS = 1.0 k, f = 1.0 kHz) MPS4123 MPS4124 MPS4123 MPS4124 MPS4123 MPS4124 MPS4123 MPS4124 fT Cob Cib hfe NF -- -- 6.0 5.0 100 170 -- -- -- 50 120 -- -- 4.0 14 13.5 200 480 MHz pF pF -- dB
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Motorola Small-Signal Transistors, FETs and Diodes Device Data
MPS4123 MPS4124
PACKAGE DIMENSIONS
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 ---
A R P
SEATING PLANE
B
F
L K D
XX G H V
1
J
C N N
SECTION X-X
DIM A B C D F G H J K L N P R V
CASE 029-04 (TO-226AA) ISSUE AD
STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR
Motorola Small-Signal Transistors, FETs and Diodes Device Data
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MPS4123 MPS4124
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298
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Motorola Small-Signal Transistors, FETs and Diodes Device Data MPS4123/D
*MPS4123/D*

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